IRF 840 MFET N-Channel TransistorIRF 840 MFET FEATURES Dynamic dV dt rating Repetitive avalanche rated N channel Fast switching Ease of paralleling Simple drive requirements TECHNICAL Drain Source Voltage (VDS) : 500V Gate Source Voltage (VGS) : 20V Continuous Drain Current @TC = 25 C : 8A. Continuous Drain Current @ TC = 100 C : 5. 1 A. Single Pulse Avalanche Energy : 510 mJ Maximum Power Dissipation @TC = 25 C ; 125 W Soldering Temperature, for 10 seconds (1. 6mm from case) 300 C
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